 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RQ5E035BN nch 30v 3.5a power mosfet datasheet l l outline v dss 30 v tsmt3 r ds(on) (max.) 37 m i d 3.5 a p d 1 w l l inner circuit l l features 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). 4) pb-free lead plating ; rohs compliant l l packaging specifications type packing embossed tape reel size (mm) 180 l l application tape width (mm) 8 switching basic ordering unit (pcs) 3000 taping code tcl marking zs l l absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 30 v continuous drain current i d *1 3.5 a pulsed drain current i d,pulse *2 12 a gate - source voltage v gss 20 v avalanche energy, single pulse e as *3 1.9 mj avalanche current i as *3 3.5 a power dissipation p d *4 1 w junction temperature t j 150 range of storage temperature t stg -55 to + 150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20140314 - rev. 002
RQ5E035BN datasheet thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - 125 - /w electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0 v, i d = 1 ma 30 - - v breakdown voltage temperature coefficient v (br)dss i d = 1 ma - 20.84 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v - - 1 a gate - source leakage current i gss v gs = 20 v, v ds = 0 v - - 100 na gate threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1 ma - -3.25 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *5 v gs = 10 v, i d = 3.5 a - 28 37 m v gs = 4.5 v, i d = 3.5 a - 43 56 gate input resistance r g - 2.8 - transconductance g fs *5 v ds = 5 v, i d = 3.5 a 2.4 - - s *1 limited only by maximum temperature allowed. *2 pw 10 s, duty cycle 1% *3 l ? 200 h, v dd = 15v, r g = 25 , starting t ch = 25 fig.3-1,3-2 *4 mounted on a ceramic boad (30300.8mm) *5 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20140314 - rev. 002 RQ5E035BN datasheet electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0 v - 250 - pf output capacitance c oss v ds = 15 v - 40 - reverse transfer capacitance c rss f = 1 mhz - 35 - turn - on delay time t d(on) *5 v dd ? 15 v,v gs = 10 v - 5.5 - ns rise time t r *5 i d = 1.75 a - 7.5 - turn - off delay time t d(off) *5 r l = 8.6 - 10 - fall time t f *5 r g = 10 - 3.5 - gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *5 v dd ? 15 v i d = 4.5 a v gs = 10 v - 6.0 - nc v gs = 4.5 v - 3.1 - gate - source charge q gs *5 - 1.2 - gate - drain charge q gd *5 - 1.1 - body diode electirical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s *1 t a = 25 - - 0.8 a body diode pulse current i sp *2 - - 12 forward voltage v sd *5 v gs = 0 v, i s = 0.8 a - - 1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20140314 - rev. 002 RQ5E035BN datasheet electrical characteristic curves fig.1 typical output characteristics(i) fig.2 typical output characteristics(ii) fig.3 breakdown voltage vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20140314 - rev. 002 datasheet fig.4 typical transfer characteristics fig.5 gate threshold voltage vs. junction temperature fig.6 transconductance vs. drain current www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 datasheet fig.7 drain current derating curve fig.8 static drain - source on - state resistance vs. gate source voltage fig.9 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 datasheet fig.10 static drain - source on - state resistance vs. drain current(i) fig.11 static drain - source on - state resistance vs. drain current(ii) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 datasheet fig.12 typical capacitance vs. drain - source voltage fig.13 switching characteristics www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 datasheet fig.14 dynamic input characteristics fig.15 source current vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 RQ5E035BN datasheet measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20140314 - rev. 002 RQ5E035BN datasheet dimensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20140314 - rev. 002 |
Price & Availability of RQ5E035BN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |